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Nidec to Exhibit Products at PCIM Asia Shenzhen 2026
Nidec will showcase its inspection platforms for insulated-gate bipolar transistor and silicon carbide power semiconductor modules at PCIM Asia Shenzhen 2026.
www.nidec.com
Nidec Advance Technology Corporation announced it will exhibit its testing and inspection solutions at PCIM Asia Shenzhen 2026, held at the Shenzhen World Exhibition and Convention Center in Bao'an Hall from August 26 to August 28, 2026, at Booth 16H15. The showcase focuses on quality assurance, dynamic characterization, and electrical testing hardware for next-generation power electronics.
Power Semiconductor Module and Substrate Inspection Portfolio
The company’s exhibit highlights two primary inspection systems designed for power electronic production lines and laboratory environments:
- NATS-1000/1730 Inspection Systems: Designed for pre-shipment final testing of insulated-gate bipolar transistor (IGBT) and silicon carbide (SiC) power modules. The automated NATS-1000 platform executes parallel testing across four distinct regimes: room-temperature insulation, high-temperature static characteristics, high-temperature dynamic switching characteristics, and room-temperature static parameters. The manual NATS-1730 configuration addresses research, development, and benchtop testing workflows.
- NATS-2120 Substrate Inspection System: Tailored for printed circuit board substrates and power modules populated with high-voltage, high-current semiconductors. The platform identifies assembly flaws to mitigate false triggering, gate misoperation, and thermal runaway under heavy operational loads.
The featured testing platforms address production scalability and defect detection across automotive traction inverters, high-power charging infrastructure, and renewable energy conversion systems.
Additional Context
This section details technical specifications not included in the original news release.
Static parametric testing for power semiconductor modules evaluates direct-current electrical behavior under controlled thermal conditions. Key parameters include forward voltage drop, collector-emitter saturation voltage in IGBTs, drain-source on-state resistance in SiC MOSFETs, gate threshold voltage, and reverse leakage currents under high-voltage blocking conditions. Testing at elevated temperatures reaching up to 175 or 200 degrees Celsius is critical for detecting localized gate-oxide defects, substrate delamination, and temperature-dependent thermal drift before modules are integrated into operational drive units.
Dynamic switching characterization evaluates alternating-current switching performance, transient turn-on and turn-off delays, rise and fall times, and reverse-recovery characteristics of integrated freewheeling diodes. In high-speed silicon carbide devices, high rates of voltage and current change require testing fixtures with ultra-low parasitic stray inductance (such as stray loop inductance values below 5 nanohenries) to prevent excessive voltage overshoot and ringing during high-speed double-pulse tests. For power-embedded printed circuit boards, electrical insulation inspection verifies dielectric isolation resistance and partial discharge limits across internal copper layers, ensuring ceramic substrates and resin layers withstand high electric field stress without dielectric breakdown.
Edited by Romila DSilva, Induportals Editor, with AI assistance.
Additional Context
This section details technical specifications not included in the original news release.
Static parametric testing for power semiconductor modules evaluates direct-current electrical behavior under controlled thermal conditions. Key parameters include forward voltage drop, collector-emitter saturation voltage in IGBTs, drain-source on-state resistance in SiC MOSFETs, gate threshold voltage, and reverse leakage currents under high-voltage blocking conditions. Testing at elevated temperatures reaching up to 175 or 200 degrees Celsius is critical for detecting localized gate-oxide defects, substrate delamination, and temperature-dependent thermal drift before modules are integrated into operational drive units.
Dynamic switching characterization evaluates alternating-current switching performance, transient turn-on and turn-off delays, rise and fall times, and reverse-recovery characteristics of integrated freewheeling diodes. In high-speed silicon carbide devices, high rates of voltage and current change require testing fixtures with ultra-low parasitic stray inductance (such as stray loop inductance values below 5 nanohenries) to prevent excessive voltage overshoot and ringing during high-speed double-pulse tests. For power-embedded printed circuit boards, electrical insulation inspection verifies dielectric isolation resistance and partial discharge limits across internal copper layers, ensuring ceramic substrates and resin layers withstand high electric field stress without dielectric breakdown.
Edited by Romila DSilva, Induportals Editor, with AI assistance.
